By Topic

Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kazazis, D. ; Div. of Eng., Brown Univ., Providence, RI ; Zaslavsky, A. ; Tutuc, E. ; Bojarczuk, N.A.
more authors

We report on ambipolar GeOI FETs fabricated on ultra-thin films of single crystal Ge, epitaxially grown on a high-k crystalline lanthanum-yttrium-oxide lattice matched to Si (111) substrate. The GeOI FETs show promising transistor characteristics at room temperature, while at low temperatures they exhibit negative differential resistance (NDR) in the drain current circuit

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006