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Strained Pt Schottky Diodes on n-type Si and Ge

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6 Author(s)
M. H. Liao ; Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R. O. C. ; S. T. Chang ; P. S. Kuo ; H. -T. Wu
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In summary, the reduction of the Schottky-barrier height for the n-type semiconductor under external mechanical strain is observed. This reduction is shown to originate from the reduction of conduction band edge. The boundary condition under uniaxial strain technology is stress-free along the direction perpendicular to uniaxial stress obtain the reasonable agreement between data and theoretical calculation

Published in:

2006 International SiGe Technology and Device Meeting

Date of Conference:

15-17 May 2006