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p-n Junction Leakage Current in Strained-Si/SGOI Diodes

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5 Author(s)
Tanabe, A. ; Assoc. of Super-Adv. Electron. Technol. (ASET), MIRAJ, Kawasaki ; Numata, T. ; Tezuka, T. ; Hirashita, N.
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In this paper, the origin of p-n junction leakage current in s-Si/SGOI diodes is investigated. It is found that generation current by bulk trap is dominant in the s-Si/SGOI p-n junction leakage current compared to diffusion current and generation current by oxide interface state and that the calculated leakage current is low enough even in Ge-on-insulator (GOI) channels at hp45 nm technology node

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006