By Topic

Discontinuous Innovation: Strained Silicon Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Patton, G.L. ; Syst. & Technol. Group, IBM, Hopewell Junction, NY

Strained silicon technology has had a dramatic impact on extending the limits of semiconductor technology. Due to the difficulties of both bipolar and CMOS scaling, strained layer technology offers a manufacturability approach to change the material properties of silicon and significantly enhance performance

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006