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A Tunable RF MEMS Inductor on Silicon Incorporating an Amorphous Silicon Bimorph in a Low-Temperature Process

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2 Author(s)
Chang, Stella ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont. ; Sivoththaman, S.

A novel tunable radio frequency microelectromechanical system inductor based on the bimorph effect of an amorphous silicon (a-Si) and aluminum structural layer is presented. The outer turns of the inductor have a vertical height of 450 mum when no voltage is applied. A 32% tuning range with high inductance (5.6-8.2 nH) is achieved by the application of a voltage, with the structure completely flattening at 2 V. With no actuation, the peak quality factor is 15, and the self-resonance frequency is 7 GHz. The fact that the device is fabricated on Si in a low-temperature (150 degC) process enhances the potential for system integration

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 11 )