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Bulk Undoped GaAs–AlGaAs Substrate-Removed Electrooptic Modulators With 3.7-V-cm Drive Voltage at 1.55 
m
Bulk Undoped GaAs–AlGaAs Substrate-Removed Electrooptic Modulators With 3.7-V-cm Drive Voltage at 1.55
Substrate removed bulk GaAs-AlGaAs electrooptic modulators with 3.7-V-cm drive voltage at 1.55 mum were realized. The 1.94-mum-thick undoped GaAs-AlGaAs epilayer removed from its substrate behaves as an electrooptic dielectric layer and has electrodes placed directly on both sides. This allows a very strong modulating electric field overlapping very well with the optical mode. The propagation loss in the presence of electrodes is less than 2.9dB/cm. There is very good agreement between the measured and simulated values
Published in:
Photonics Technology Letters, IEEE
(Volume:18
,
Issue:
21
)
Date of Publication: Nov.1, 2006
- Page(s):
- 2251 - 2253
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 9151478
- Digital Object Identifier :
- 10.1109/LPT.2006.884729
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 23 October 2006
- Issue Date :
- Nov.1, 2006
- Sponsored by :
- IEEE Photonics Society
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