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Bulk Undoped GaAs–AlGaAs Substrate-Removed Electrooptic Modulators With 3.7-V-cm Drive Voltage at 1.55 \mu m

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3 Author(s)
JaeHyuk Shin ; Electr. Eng. Dept., California Univ., Santa Barbara, CA ; Shaomin Wu ; Dagli, N.

Substrate removed bulk GaAs-AlGaAs electrooptic modulators with 3.7-V-cm drive voltage at 1.55 mum were realized. The 1.94-mum-thick undoped GaAs-AlGaAs epilayer removed from its substrate behaves as an electrooptic dielectric layer and has electrodes placed directly on both sides. This allows a very strong modulating electric field overlapping very well with the optical mode. The propagation loss in the presence of electrodes is less than 2.9dB/cm. There is very good agreement between the measured and simulated values

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 21 )