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A High-Temperature Multichip Power Module (MCPM) Inverter utilizing Silicon Carbide (SiC) and Silicon on Insulator (SOI) Electronics

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5 Author(s)
Hornberger, J.M. ; Arkansas Power Electron. Int. Inc., Fayetteville, AR ; Cilio, E. ; Schupbach, R.M. ; Lostetter, A.B.
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The researchers at Arkansas Power Electronics International, Inc. have designed, developed, packaged, and manufactured the first complete multichip power module (MCPM) integrating SiC power transistors with silicon on insulator (SOI) control electronics. The MCPM is a 4 kW three-phase inverter that operates at temperatures in excess of 250 degC. Bare die HTMOS SOI control components have been integrated with bare die SiC power JFETs into a single compact module. The high-temperature operation of SiC switches allows for increased power density over silicon electronics by an order of magnitude, leading to highly miniaturized power converters. In this paper, the researchers discusses the challenges associated with high-temperature operation of power electronics; present the electrical, mechanical, and thermal design of a high-temperature MCPM; discuss the multitude of packaging issues that were solved to reach high-temperature operation; illustrate the high power density and miniaturization achieved by the SiC MCPM; and present the experimental test results of the fully operational 4 kW SiC MCPM

Published in:

Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE

Date of Conference:

18-22 June 2006