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Hybrid simulation and sensitivity analysis for advanced bipolar device design and process development

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3 Author(s)
Voorde, P.V. ; Hewlett-Packard Corp., Palo Alto, CA, USA ; Pettengill, D. ; Soo-Young Oh

A methodology for using SUPREM, PISCES, and SPICE to simulate the AC characteristics of advanced bipolar devices is described. Accurate predictions for fT and fMAX to process variations are calculated. These techniques can be used to study the sensitivity of device performance to variations in the device structure or doping profiles. Analysis of charge storage in the device structure using PISCES yields estimates for the various delay components. The impact ionization models in PISCES can be used to estimate the breakdown properties of a given device structure or doping profile

Published in:

Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990

Date of Conference:

17-18 Sep 1990