Hybrid simulation and sensitivity analysis for advanced bipolar device design and process development

A methodology for using SUPREM, PISCES, and SPICE to simulate the AC characteristics of advanced bipolar devices is described. Accurate predictions for f/sub T/ and f/sub MAX/ to process variations are calculated. These techniques can be used to study the sensitivity of device performance to variations in the device structure or doping profiles. Analysis of charge storage in the device structure using PISCES yields estimates for the various delay components. The impact ionization models in PISCES can be used to estimate the breakdown properties of a given device structure or doping profile.<
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