By Topic

Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to 10^16 n/cm ^2 by 1 MeV Neutrons

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

We report the results of an experimental study on the radiation hardness of 4H-SiC diodes used as alpha-particle detectors with 1 MeV neutrons up to a fluence of 8times1015 n/cm2. As the irradiation level approaches the range 1015 n/cm2 , the material behaves as intrinsic due to a very high compensation effect and the diodes are still able to detect with a reasonable good Charge Collection Efficiency (CCE=80%). For fluences >1015 n/cm2 CCE decreases monotonically to ap20% at the highest fluence. Heavily irradiated SiC diodes have been studied by means of Photo Induced Current Transient Spectroscopy (PICTS) technique in order to characterize the electronic levels associated with the irradiation-induced defects. The dominant features of the PICTS spectra occur between 400-700 K; in this temperature range the deep levels associated with the induced defects play the main role in degradation of the CCE. Enthalpy, capture cross-section and concentration of such deep levels were calculated and we found that two deep levels (Et=1.18 eV and Et=1.50 eV) are responsible for the decrease in CCE. They have been associated to an elementary defect involving a carbon vacancy and to a defect complex involving a carbon and a silicon vacancy, respectively

Published in:

Nuclear Science, IEEE Transactions on  (Volume:53 ,  Issue: 5 )