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Modulation bandwidth enhancement in single quantum well GaAs/AlGaAs lasers

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5 Author(s)
Chen, T.R. ; California Inst. of Technol., Pasadena, CA, USA ; Zhao, B. ; Yamada, Y. ; Zhuang, Y.H.
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The state filling effect in semiconductor quantum well lasers significantly affects the modulation dynamics. The state filling effect strongly depends on the optical confining layer structure. As a direct consequence of the reduction of the state filling effect in a properly designed graded index separate confinement heterostructure, a record 3 dB bandwidth in excess of 9 GHz has been obtained in uniformly pumped single quantum well GaAs/AlGaAs lasers by a careful tailoring of the vice parameters.

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Electronics Letters  (Volume:28 ,  Issue: 21 )