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Design-oriented compact models for CNTFETs

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3 Author(s)
F. Pregaldiny ; InESS/ENSPS, Illkirch ; C. Lallement ; J. -B. Kammerer

This paper deals with the compact modeling of an emerging technology: the carbon nanotube field-effect transistor (CNTFET). The paper proposed two design-oriented compact models, the first one for CNTFET with a classical behavior (MOSFET-like CNTFET), and the second one for CNTFET with an ambipolar behavior (Schottky-barrier CNTFET). Both models have been compared with exact numerical simulations and then implemented in VHDL-AMS

Published in:

International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.

Date of Conference:

5-7 Sept. 2006