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High Q-VCO with low phase noise for communications applications

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4 Author(s)
Boughanmi, N. ; Lab. of Electron. & Technol. of Inf., Nat. Eng. Sch. of Sfax ; Ben Issa, D. ; Kachouri, A. ; Samet, M.

This work describes the design and implementation of a highly integrated, low-noise VCO realized in a 0.35 mum CMOS technology. We focus on the analysis of Q-VCO whose frequence of oscillation is determined by the resonant frequency of LC tank. The Q-VCO phase noise is directly connected to the quality factor of the LC resonant circuit, which is mainly determined by the on-chip inductor in this technology. We can obtain high Q factors over 80 at 2.9 GHz. Even, Q-VCO exhibits lower phase noise performance for a given power dissipation. From a carrier at 2.9 GHz, dissipating 2.4 mA under a 2.5 V power supply and 1V tuning voltage, simulated phase noise results are -1.36 dBc/Hz at an offset of 100 kHz. And -22 dBc/Hz at an offset of 100 MHz

Published in:

Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on

Date of Conference:

5-7 Sept. 2006