By Topic

High Performance Quantum-Dot Lasers on Silicon - Challenges and Future Prospects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Bhattacharya, P. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI ; Mi, Z. ; Yang, J.

We report the growth and characteristics of high performance self-organized InGaAs/GaAs quantum dot lasers on silicon. The devices exhibit low threshold current (Jth~900 A/cm2), high output power (~150 mW), and large characteristic temperature (T0=244 K)

Published in:

Group IV Photonics, 2006. 3rd IEEE International Conference on

Date of Conference:

13-15 Sept. 2006