We report the growth and characteristics of high performance self-organized InGaAs/GaAs quantum dot lasers on silicon. The devices exhibit low threshold current (Jth~900 A/cm2), high output power (~150 mW), and large characteristic temperature (T0=244 K)
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Group IV Photonics, 2006. 3rd IEEE International Conference on
Date of Conference: 13-15 Sept. 2006