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Waveguide-Integrated Ge p-i-n Photodetectors on SOI Platform

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17 Author(s)
J. F. Liu ; Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA ; D. Pan ; S. Jongthammanurak ; D. Ahn
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We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at lambda=1520 nm, and a 3 dB bandwidth of >4.5 GHz measured at lambda=1550 nm

Published in:

3rd IEEE International Conference on Group IV Photonics, 2006.

Date of Conference:

13-15 Sept. 2006