Referenced Items are not available for this document.
We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at lambda=1520 nm, and a 3 dB bandwidth of >4.5 GHz measured at lambda=1550 nm
Published in:
Group IV Photonics, 2006. 3rd IEEE International Conference on
Date of Conference: 13-15 Sept. 2006
- Page(s):
- 173 - 175
- Print ISBN:
- 1-4244-0096-1
- INSPEC Accession Number:
- 9274213
- Conference Location :
- Ottawa, Ont.
- Digital Object Identifier :
- 10.1109/GROUP4.2006.1708203
- Product Type:
- Conference Publications
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