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1.3 μm-Band Laser with a High Characteristic Temperature (T0=130 K) on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method

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7 Author(s)
Arai, M. ; Photonics Labs., NTT Corp., Atsugi ; Watanabe, Takao ; Yuda, M. ; Kinoshita, K.
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We have developed high-performance 1.3 mum-band laser diodes on an InGaAs ternary substrate with a low indium content (In: 0.1) grown by a novel bulk crystal growth technique (TLZ method). This laser operates at a long wavelength of 1.28 mum and at temperatures up to 195degC by using a highly strained InGaAs quantum well. The characteristic temperatures are 130 K from 25 to 95degC and 95 K from 95 to 155degC

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Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International

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