1.3 μm-Band Laser with a High Characteristic Temperature (T0=130 K) on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method

We have developed high-performance 1.3 μm-band laser diodes on an InGaAs ternary substrate with a low indium content (In: 0.1) grown by a novel bulk crystal growth technique (TLZ method). This laser operates at a long wavelength of 1.28 μm and at temperatures up to 195degC by using a highly strained InGaAs quantum well. The characteristic temperatures are 130 K from 25 to 95°C and 95 K from 95 to 155°C