Referenced Items are not available for this document.
The paper presents theoretical analyses, simulations and design of a PTAT (proportional to absolute temperature) temperature sensor that is based on the vertical PNP structure and dedicated to CMOS VLSI circuits. Performed considerations take into account specific properties of materials that forms electronic elements. The electrothermal simulations are performed in order to verify the unwanted self-heating effect of the sensor
Published in:
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Date of Conference: 22-24 June 2006
- Page(s):
- 415 - 420
- Print ISBN:
- 83-922632-2-7
- INSPEC Accession Number:
- 9123680
- Conference Location :
- Gdynia
- Digital Object Identifier :
- 10.1109/MIXDES.2006.1706612
- Product Type:
- Conference Publications
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