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p-type conduction above room temperature in nitrogen-doped ZnO thin film grown by plasma-assisted pulsed laser deposition

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7 Author(s)
Chakrabarti, S. ; Nat. Centre for Plasma Sci. & Technol., Dublin City Univ. ; Doggett, B. ; O'Haire, R. ; McGlynn, E.
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Nitrogen-doped ZnO thin films were deposited using the pulsed laser deposition technique. The epitaxial ZnO films were p-type in the measured temperature range 200-450 K, with hole concentrations and mobilities of 9.6times1015 cm-3 and 10.8 cm2/V-s, respectively, at room temperature. The films remained p-type under conditions of changing illumination. This result represents a step towards realisation of ZnO-based optoelectronic devices for high-temperature operation

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Electronics Letters  (Volume:42 ,  Issue: 20 )