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Power Converter EMI Analysis Including IGBT Nonlinear Switching Transient Model

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2 Author(s)
Meng Jin ; Res. Inst. of Power Electron. Technol., Naval, Naval Univ. of Eng., Wuhan ; Ma Weiming

It is well known that very high dv/dt and di/dt during the switching instant is the major high-frequency electromagnetic interference (EMI) source. This paper proposes an improved and simplified EMI-modeling method considering the insulated gate bipolar transistor switching-behavior model. The device turn-on and turn-off dynamics are investigated by dividing the nonlinear transition by several stages. The real device switching voltage and current are approximated by piecewise linear lines and expressed using multiple dv/dt and di/dt superposition. The derived EMI spectra suggest that the high-frequency noise is modeled with an acceptable accuracy. The proposed methodology is verified by experimental results using a dc-dc buck converter

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Industrial Electronics, IEEE Transactions on  (Volume:53 ,  Issue: 5 )