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A 76 x 77mm/sup 2/, 16.85 Million Pixel CMOS APS Image Sensor

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2 Author(s)
S. Ay ; Micron Technol., Inc., Pasadena, CA ; E. Fossum

A 16.85 million pixel (4,096 times 4,114), single die (76mm times 77mm) CMOS active pixel sensor (APS) image sensor with 1.35Me- pixel well-depth was designed, fabricated, and tested in a 0.5mum CMOS process with a stitching option. A hybrid photodiode-photogate (HPDPG) APS pixel technology was developed. Pixel pitch was 18mum. The developed image sensor was the world's largest single-die CMOS image sensor fabricated on a 6-inch silicon wafer

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2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.

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