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A Novel Cu Electrical Fuse Structure and Blowing Scheme Utilizing Crack-Assisted Mode for 90-45nm-Node and Beyond

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5 Author(s)
Ueda, T. ; Adv. Device Dev. Div., NEC Electron. Corp., Kanagawa ; Takaoka, H. ; Hamada, M. ; Kobayashi, Y.
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This paper presents the redundancy technology that uses Cu wiring as electrical fuse (e-fuse) for the first time. The novel e-fuse employs "crack-assisted mode" to blow fuse-material (Cu wire). Because Cu wiring is used instead of gate poly electrode material, the technology is extendible from the present 90nm~65nm technology-node to a few generations beyond 45nm-node, where Cu wiring is still likely to be employed. This e-fuse technology achieves very high reliability of less than 0.001ppm defective rate. High stability of this new e-fuse has been proven with actual 90nm generation products

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VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

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