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Impact of HfSiON Induced Flicker Noise on Scaling of Future Mixed-Signal CMOS

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4 Author(s)
Yasuda, Y. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA ; Chung-Hsun Lin ; Tsu-Jae King Liu ; Chenming Hu

It is shown for the first time that HfSiON gate dielectric thickness has a strong impact on the flicker (1/f) noise of devices with Lg < 1mum. We have developed a simple model for both gate length (Lg) and HfSiON thickness dependences of N-FET flicker noise, based on excess traps at the gate-edges. P-FET noise does not exhibit such strong dependences. Scaling of future analog devices with high-k gate stack may be limited by noise considerations

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VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

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