Referenced Items are not available for this document.
For the multi-gigabit NAND flash memory, SONOS-type FinFET device with p+ gate and high-k blocking dielectric has been integrated both on the cell array and GSL/SSL for the first time. The advantages of the FinFET structure for the NAND flash application have been theoretically and experimentally demonstrated, and the results show that the 85 % improved on-cell current is achievable using FinFET device. The enhanced programming and retention characteristics of FinFET have been also presented, and modeled by the potential changes on fully-depleted body of the sub-40 nm ultra-narrow fin
Published in:
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Date of Conference: 0-0 0
- Page(s):
- 86 - 87
- Print ISBN:
- 1-4244-0005-8
- INSPEC Accession Number:
- 9165556
- Conference Location :
- Honolulu, HI
- Digital Object Identifier :
- 10.1109/VLSIT.2006.1705229
- Product Type:
- Conference Publications
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