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1-D and 2-D Geometry Effects in Uniaxially-Strained Dual Etch Stop Layer Stressor Integrations

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18 Author(s)
Grudowski, P. ; Austin Silicon Technol. Solutions, Freescale Semicond., Inc., Austin, TX ; Adams, V. ; Xiang-Zheng Bo ; Loiko, K.
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We report, for the first time, on the 2D boundary effects in a high performance 65nm SOI technology with dual etch stop layer (dESL) stressors. 1D geometry effects, such as poly pitch dependence, and the implications on SPICE models and circuit design are also discussed. It will be shown that PMOS and ring oscillator performance can be significantly enhanced by optimizing the transverse and lateral placement of the dESL boundary

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VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

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