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A Novel Multi-Functional Silicon-On-ONO (SOONO) MOSFETs for SoC Applications: Electrical Characterization for High Performance Transistor and Embedded Memory Applications

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11 Author(s)
Oh, Chang Woo ; Device Res. Team, Samsung Electron. Co., Yongin ; Sung Hwan Kim ; Na Young Kim ; Yong Lack Choi
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We proposed and successfully demonstrate multi-functional Si-on-ONO (SOONO) MOSFETs. As a high performance transistor and embedded 2-bit flash memory, they show the reasonable characteristics. SOONO MOSFETs act as ultra thin body transistor with self-limited shallow junction, resulting in good SCE immunity and high driving currents, 737muA/mum for nMOS and 330muA/mum for pMOS at |VGS| = |VDS| = 1 V, IOFF = 100 nA/mum). In terms of flash memory, SOONO MOSFET acts as 2-bit flash memory with 2 physically separated storage node in back side. By using CHEI/HHI program/erase, each node was easily programmed and erased. In the gate length of 120 nm, we achieved the read/write margins of ~1.3 V at VDS = 1.2 V and the VTH shifts of ~2.5V for both program/erase

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VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

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