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Development of New TiN/ZrO2/Al2O3/ZrO2/TiN Capacitors Extendable to 45nm Generation DRAMs Replacing HfO2 Based Dielectrics

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12 Author(s)
D. -S. Kil ; R&D Div., Hynix Semicond. Inc., Kyoungki ; H. -S. Song ; K. -J. Lee ; K. Hong
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New ZrO2/Al2O3/ZrO2 (ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO2 and amorphous Al 2O3. Thus prepared ZAZ TFT capacitors showed very small Tox.eq value of 6.3Aring and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TFT capacitor was thermally robust during backend full thermal process by applying it to the final DRAM product in mass production

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2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.

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