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Vertex Channel Field Effect Transistor (VC-FET) Technology Featuring High Performance and Highly Manufacturable Trench Capacitor DRAM

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16 Author(s)
Kido, M. ; SoC Res. & Dev. Center, Toshiba Corp., Yokohama ; Kito, M. ; Katsumata, R. ; Kondo, M.
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Vertex channel (VC) transistor is applied to both support devices and array transistor of trench capacitor DRAM for the first time. On-current of VC-FETs is much higher than that of conventional planar devices with keeping sufficiently small off-current. They achieve 15% or much smaller propagation delay (Tpd) of fan-out 3 than planar devices. Furthermore, 1.6 times of on-current as a planar array transistor is achieved by the combination of VCAT and P+poly gate without degradation of retention characteristics

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VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

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