By Topic

Impact of Crystalline Phase of Ni-FUSI Gate Electrode on BTI and TDDB Reliability of HfSiON MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Terai, M. ; Syst. Devices Res. Labs., NEC Corp., Sagamihara ; Onizawa, T. ; Kotsuji, S. ; Toda, Akio
more authors

We investigated the mechanisms of bias temperature instability (BTI) and time dependent dielectric breakdown (TDDB) of phase-controlled-Ni-FUSI/HfSiON that has an electrode of NiSi and Ni3Si. A NFET-PBTI did not degrade and the electron trap density remained low even with a higher Ni-content electrode. On the other hand, NFET-TDDB degraded with a Ni3Si electrode. The decrease was related to a degradation in insulator quality near the gate dielectrics/Si interface that was enhanced by a compressive mechanical strain due to the gate electrode. NBTI of PFET did not degrade with a Ni 3Si electrode, but the main NBTI component changed from interface trap generation to hole trapping of the gate dielectrics. PFET-TDDB was improved by using NiSi and Ni3Si instead of p+ poly-Si. We attribute this improvement to a reduction in electron energy at the anode. Thus, the NFET: NiSi and PFET: Ni3Si is judged to be a superior combination for both of reliability and initial characteristics

Published in:

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Date of Conference:

0-0 0