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This paper explains the frequency and bias dependences of the effective gate resistance (real part of h11) by considering the effect of the gate-to-body capacitance, gate-to-source/drain overlap capacitances, fringing capacitances, and nonquasi-static (NQS) effect. A new method of separating the physical gate resistance and the NQS channel resistance is proposed. Separating the gate-to-source parasitic capacitances from the gate-to-source inversion capacitance is found to be necessary for an accurate modeling of all the Y-parameters
Published in:
Electron Devices, IEEE Transactions on
(Volume:53
,
Issue:
10
)
Date of Publication: Oct. 2006
- Page(s):
- 2620 - 2626
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 9103181
- Digital Object Identifier :
- 10.1109/TED.2006.882398
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 25 September 2006
- Issue Date :
- Oct. 2006
- Sponsored by :
- IEEE Electron Devices Society
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