By Topic

Mobility and threshold-voltage comparison between [110]- and (100)-oriented ultrathin-body silicon MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Gen Tsutsui ; Univ. of Tokyo ; Hiramoto, T.

Mobility and threshold-voltage (Vth) behaviour in (110) and (100) ultrathin body (UTB) n- and p-MOSFETs are experimentally examined, and performance is compared between (110) and (100) UTB CMOSFETs based on the estimated propagation delay time. Out-of-plane effective mass (mz) is the key parameter that causes the difference in mobility and Vth behavior between (110) and (100). Large Vth increase and monotonic mobility degradation, as a decrease of the silicon-on-insulator (SOI) thickness, are observed in (110) UTB nMOSFETs due to a smaller mz than (100). Mobility enhancement in (100) UTB double-gate (DG) pMOSFETs is demonstrated, which may be attributable to volume inversion. Propagation delay time is estimated based on the measured mobility, and delay is improved by 30% in (110) UTB DG CMOSFETs compared to conventional bulk CMOSFETs

Published in:

Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 10 )