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Single nanoparticle semiconductor devices

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7 Author(s)
Ding, Yongping ; Dept. of Electr. & Comput. Eng., Minnesota Univ. ; Ying Dong ; Bapat, Ameya ; Nowak, J.D.
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Using a new technique in forming the cubic single-crystal silicon nanoparticles that are about 40 nm on a side, the authors have demonstrated a vertical-flow surround-gate Schottky-barrier transistor. This approach allows the use of well-known approaches to surface passivation and contact formation within the context of deposited single-crystal materials for device applications. It opens the door to the novel three-dimensional integrated circuits and new approaches to hyper integration. The fabrication process involves successive deposition and planarization and does not require nonoptical lithography. Device characteristics show reasonable turn-off characteristics and on-current densities of more than 107 A/cm2

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Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 10 )