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Effect of phonon scattering on intrinsic delay and cutoff frequency of carbon nanotube FETs

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3 Author(s)
Youngki Yoon ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL ; Yijian Ouyang ; Guo, Jing

The effect of phonon scattering on the intrinsic delay and cutoff frequency of Schottky-barrier carbon nanotube (CNT) FETs (CNTFETs) is examined. Carriers are mostly scattered by optical and zone-boundary phonons beyond the beginning of the channel. It is shown that the scattering has a small direct effect on the dc on current of the CNTFET, but it results in a significant decrease of intrinsic cutoff frequency and increase of intrinsic delay

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Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 10 )