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A Simple Subthreshold CMOS Voltage Reference Circuit With Channel- Length Modulation Compensation

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3 Author(s)
Po-Hsuan Huang ; Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung ; Hongchin Lin ; Yen-Tai Lin

This brief presents a simple reference circuit with channel-length modulation compensation to generate a reference voltage of 221 mV using subthreshold of MOSFETs at supply voltage of 0.85 V with power consumption of 3.3 muW at room temperature using TSMC 0.18-mum technology. The proposed circuit occupied in less than 0.0238 mm 2 achieves the reference voltage variation of 2 mV/V for supply voltage from 0.9 to 2.5V and about 6 mV of temperature variation in the range from -20degC to 120 degC. The agreement of simulation and measurement data is demonstrated

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Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:53 ,  Issue: 9 )