Referenced Items are not available for this document.
This brief presents a simple reference circuit with channel-length modulation compensation to generate a reference voltage of 221 mV using subthreshold of MOSFETs at supply voltage of 0.85 V with power consumption of 3.3 muW at room temperature using TSMC 0.18-mum technology. The proposed circuit occupied in less than 0.0238 mm 2 achieves the reference voltage variation of 2 mV/V for supply voltage from 0.9 to 2.5V and about 6 mV of temperature variation in the range from -20degC to 120 degC. The agreement of simulation and measurement data is demonstrated
Published in:
Circuits and Systems II: Express Briefs, IEEE Transactions on
(Volume:53
,
Issue:
9
)
Date of Publication: Sept. 2006
- Page(s):
- 882 - 885
- ISSN :
- 1549-7747
- INSPEC Accession Number:
- 9107430
- Digital Object Identifier :
- 10.1109/TCSII.2006.881813
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 25 September 2006
- Issue Date :
- Sept. 2006
- Sponsored by :
- IEEE Circuits and Systems Society
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