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430-V 12.4- \hbox {m}\Omega \cdot \hbox {cm}^{2} Normally off 4H-SiC Lateral JFET

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8 Author(s)
M. Su ; Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ ; K. Sheng ; Y. Li ; Y. Zhang
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This letter reports the experimental demonstration of the first 4H-SiC normally off high-voltage lateral junction field-effect transistor. The design and fabrication of such a device have been investigated. The fabricated device has a vertical channel length of 1.8 mum created by tilted aluminum implantation on the sidewalls of deep trenches and a lateral drift-region length of 5 mum. Normally off operation (VGS=0V) with a blocking voltage Vbr of 430 V has been achieved with a specific on-resistance Ron-sp of 12.4 mOmegamiddotcm2, which is the lowest specific on-resistance for 4H-SiC lateral power switches reported to date, resulting in a Vbr 2/Ron-sp value of 15 MW/cm2. This is among the best Vbr 2/R on-sp figure-of-merit reported to date for 4H-SiC lateral high-voltage devices

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IEEE Electron Device Letters  (Volume:27 ,  Issue: 10 )