High- 
Dielectrics and FUSI NiSi Metal Electrodes
Referenced Items are not available for this document.
0.86-nm CET Gate Stacks With Epitaxial
In this letter, ultrathin gadolinium oxide (Gd2O3 ) high-k gate dielectrics with complementary-metal-oxide-semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET=0.86 nm. The extracted dielectric constant is k=13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond
Published in:
Electron Device Letters, IEEE
(Volume:27
,
Issue:
10
)
Date of Publication: Oct. 2006
- Page(s):
- 814 - 816
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9116758
- Digital Object Identifier :
- 10.1109/LED.2006.882581
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 25 September 2006
- Issue Date :
- Oct. 2006
- Sponsored by :
- IEEE Electron Devices Society
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