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Extracting Defect Density and Size Distributions from Product ICs

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8 Author(s)
Nelson, J.E. ; Carnegie Mellon Univ., Pittsburgh, PA ; Zanon, T. ; Brown, J.G. ; Poku, O.
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Defect density and size distributions (DDSDs) are important parameters for characterizing spot defects in a process. This article addresses random spot defects, which affect all processes and currently require a heavy silicon investment to characterize and a new approach is proposed for characterizing such defects. This approach presents a system that overcomes the obstacle of silicon area overhead by using available wafer sort test results to measure critical-area yield model parameters with no additional silicon area. The results of the experiment on chips fabricated in silicon confirm the results of the simulation experiment that DDSDs measurement characterizes a process in ordinary digital circuits using only slow, structural test results from the product

Published in:

Design & Test of Computers, IEEE  (Volume:23 ,  Issue: 5 )

Date of Publication:

May 2006

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