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Structure and Magnetism of Ba-Hexaferrite Films Grown on Single Crystal 6-H SiC With Graduated Interfacial MgO Buffer Layers

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7 Author(s)
Chen, Zhaohui ; Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA ; Yang, Aria ; Cai, Zhuhua ; Yoon, S.D.
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M-type barium hexaferrite films were processed by pulsed laser deposition on single-crystal 6-H silicon carbide substrates. MgO buffer and barrier layers were introduced to improve the film quality. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, X-ray diffraction, vibrating sample magnetometry, and ferromagnetic resonance (FMR). X-ray thetas-2thetas diffraction measurements indicated a strong (0, 0, 2n) crystallographic alignment. The magnetization of the BaM film is comparable to bulk values (4piMs~4320 G). A derivative power FMR linewidth of 500 Oe was measured at 55 GHz for the as-deposited films. This paper explores a potential next generation of microwave and millimeter-wave monolithic integrated circuit technology based upon a wide band-gap semiconducting material

Published in:

Magnetics, IEEE Transactions on  (Volume:42 ,  Issue: 10 )

Date of Publication:

Oct. 2006

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