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The size of the write windows for ultrafast magnetic random access memory (MRAM) write operation based on ballistic bit addressing (BBA) is studied. During BBA the magnetization of a bit which is to be reversed undergoes a half precessional turn, whereas a bit which is not to be reversed undergoes a full precessional turn. After BBA pulse application the residual demagnetizing energy of the magnetic bit is low and magnetization ringing is suppressed. By single-spin simulations of the magnetization dynamics of an MRAM cell quasi-static and dynamic switching asteroids and maps of the residual energy after bit addressing are calculated. The results show a sufficient write margin allowing low-ringing ultrafast BBA MRAM write operation
Published in:
Magnetics, IEEE Transactions on
(Volume:42
,
Issue:
10
)
Date of Publication: Oct. 2006
- Page(s):
- 2760 - 2762
- ISSN :
- 0018-9464
- INSPEC Accession Number:
- 9116617
- Digital Object Identifier :
- 10.1109/TMAG.2006.878866
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 25 September 2006
- Issue Date :
- Oct. 2006
- Sponsored by :
- IEEE Magnetics Society
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