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Effect of Deposition Pressure on Switching Field Distribution of CoPtCr–SiO _2 Perpendicular Magnetic Recording Thin Film Media

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4 Author(s)
Vokoun, David ; Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu ; Lai, Chih-Huang ; Lin, Meng-Shian ; Jiang, Ruo-Fan

We studied the effects of the deposition Ar pressure on the switching field distribution (SFD) of Tb/Pt/Ru/CoPtCr-SiO2 perpendicular media. In this study, we describe a simple method for obtaining parameters of the SFD such as the standard deviation (SD) while taking the effect of demagnetizing field into account. The SFD changed its character greatly with the change of Ar pressure. The differences in the SD of the SFD of various samples may originate from the variation of intergranular exchange and the demagnetizing field due to different Ar pressure

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Magnetics, IEEE Transactions on  (Volume:42 ,  Issue: 10 )