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Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the \hbox {Pt/LaF}_{3} Interface

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4 Author(s)
Filippov, V.I. ; Inst. of Molecular Phys., Russian Res. Center Kurchatov Inst., Moscow ; Vasiliev, A.A. ; Moritz, W. ; Szeponik, J.

An LaF3 layer was shown to improve the characteristics of field-effect gas sensors for room-temperature hydrogen monitoring. The Pt/LaF3 interface leads to a Nernst-type response and a detection limit of 10-ppm hydrogen in atmospheric air. The response time was shown to be about 110 s and was independent of hydrogen concentration. A method for the stabilization of a long-term behavior of the sensor was successfully demonstrated. The mechanism of the sensor's response to hydrogen was shown to be different from that of the metal/insulator/semiconductor (MIS)-type sensors

Published in:

Sensors Journal, IEEE  (Volume:6 ,  Issue: 5 )