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The transistor effect in p-type germanium is discussed and some properties are given for p-germanium transistors made in the laboratory. These exhibit higher cutoff frequency and somewhat lower current multiplication than their n-germanium counterparts. Under certain conditions a negative resistance "snap" effect is observed which is apparently peculiar to p-type germanium. Both types of transistor are governed by the same physical principles but they differ in the signs of the emitted carriers and of the bias voltages.