By Topic

The p-Germanium Transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
W. G. Pfann ; Bell Telephone Laboratories, Inc., Murray Hill, N.J. ; J. H. Scaff

The transistor effect in p-type germanium is discussed and some properties are given for p-germanium transistors made in the laboratory. These exhibit higher cutoff frequency and somewhat lower current multiplication than their n-germanium counterparts. Under certain conditions a negative resistance "snap" effect is observed which is apparently peculiar to p-type germanium. Both types of transistor are governed by the same physical principles but they differ in the signs of the emitted carriers and of the bias voltages.

Published in:

Proceedings of the IRE  (Volume:38 ,  Issue: 10 )