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Simulation of small semiconductor devices using a coupled Monte Carlo-Poisson approach

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2 Author(s)
Laux, S.E. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Fischetti, M.V.

A numerical model for electronic transport in semiconductor devices is summarized and a recently published model-based comparison of idealized submicron MOSFETs which are nominally the same except for differing substrate material is reviewed. Five substrate materials-Ge, Si, GaAs, InP, and In0.53Ga0.47As are considered, and the logic switching performance of the devices is compared. These simulations were performed with the program DAMOCLES (device analysis using Monte Carlo et Poisson solver), implementing a solid physical basis within a flexible device modeling framework. In addition, an analysis utilizing a GaAs SISFET is performed

Published in:

High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in

Date of Conference:

5-7 Aug 1991

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