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Analysis of the Frequency Response of Carbon Nanotube Transistors

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3 Author(s)
D. Akinwande ; Dept. of Electr. Eng., Stanford Univ. ; G. F. Close ; H. -S. P. Wong

The characterizations of carbon nanotube transistors at high frequencies have so far been hindered by large parasitic and extrinsic capacitances. We present a quantitative analysis of the limitations imposed by probe pad parasitics on single-wall carbon nanotube transistor characterization at gigahertz frequencies. Our analysis reveals the various kinds of frequency responses that can be expected to be measured. Furthermore, we present design guidelines and a suitable device layout to achieve gain and bandwidth at gigahertz frequencies

Published in:

IEEE Transactions on Nanotechnology  (Volume:5 ,  Issue: 5 )