By Topic

Metallization on Semiconductors in the Single Digit Nanometer Regime

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chang, Che‐Chen ; Nat. Taiwan Univ., Taipei ; Chien-Hwa Lung

The continued advances in miniaturization of semiconductor devices has seriously challenged contact technology. This study explored the possibility of fabricating metal contacts from the bottom up on semiconductors using a linear metal atom string complex for chemical vapor deposition. The deposition and surface reaction of the dipyridylamino trichromium complex on GaN were characterized using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The molecular structure of the metal atom string complex remained intact upon deposition on the substrate. The complex bonded chemically to the sample substrate via the metal atom. It anchored on the substrate surface with the metal string pointing away from the surface. The anchored metal strings remain stable on the substrate up to temperatures higher than room temperature. The use of metal atom string complexes as interconnects for electrical communication among sub-10-nm features in future-generation chips is discussed

Published in:

Nanotechnology, IEEE Transactions on  (Volume:5 ,  Issue: 5 )