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Hydrogenation of multicrystalline silicon from a backside silicon nitride layer

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3 Author(s)
Lemiti, M. ; Lab. de Phys. de la Matiere, INSA de Lyon, Villeurbanne, France ; Gervais, J. ; Martinuzzi, S.

In order to improve multicrystalline p-type silicon wafers, the authors have used the hydrogenation technique to deposit a Si3N4 layer containing hydrogen on a p-type surface. Silicon nitride films have been deposited by the process of mercury-sensitized photochemical vapor deposition (photo-CVD), using a gaseous mixture of SiH4 and NH under 253.7 nm ultraviolet light irradiation. The main advantages of this technique are the low deposition temperature (100-400°C) and no radiation damage compared to the plasma-enhanced CVD method. Due to the low temperature, the Si 3N4 film could be deposited after the metallization of solar cells, provided that the back contact is a grid. On the front surface, the Si3N4 layer could constitute an antireflecting coating. A deposition rate of 8 nm/min and a refractive index of about two were achieved

Published in:

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Date of Conference:

7-11 Oct 1991