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Ultra-low voltage nano-scale embedded RAMs

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3 Author(s)
Itoh, K. ; Central Res. Lab., Hitachi, Ltd., Tokyo ; Horiguchi, M. ; Kawahara, T.

Ultra-low voltage nano-scale embedded RAMs are described, focusing on RAM cells and peripheral circuits. First, challenges and trends of low-voltage RAM cells are discussed in terms of signal charge, signal voltage, and noise. ECC to cope with the ever-increasing soft-error rate, power-supply controls to widen the voltage margin of cells, and a fully-depleted SOI to reduce VT-variation are also investigated. Then peripheral circuits are explained in terms of leakage reduction and compensation for speed variations. Based on this, it is concluded that ultra-low voltage RAMs cannot be achieved without reducing speed variations caused by variations in VT, thus resulting in a further need for compensation circuits and new devices with reduced VT variation

Published in:

Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on

Date of Conference:

21-24 May 2006

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