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High-temperature performance and radiation resistance of high-efficiency Ge and Si0.07Ge0.93 solar cells on lightweight Ge substrates

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7 Author(s)
Venkatasubramanian, R. ; Research Triangle Inst., Research Triangle Park, NC, USA ; Timmons, M.L. ; Pickett, R.T. ; Colpitts, T.S.
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Ge and Si0.07Ge0.93 alloys are potential candidates for low-bandgap junctions in multijunction solar cells. The radiation resistance of these materials to 1 MeV electrons has been measured, yielding end-of-life/beginning-of-life ratios of about 0.85 at a fluence of 1016 electrons/cm2. For Ge, the temperature coefficient of efficiency has been determined to be -0.106%/°C under a full AM0 spectrum and -0.048%/°C under a GaAs filter. Si0.7Ge0.93 cells have shown no performance degradation after exposure to temperatures as high as 500°C, and the temperature coefficient of efficiency for Si0.07 Ge0.93 junctions is about -0.045%/°C, about the same as Si in spite of a lower bandgap by almost 200 meV

Published in:

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Date of Conference:

7-11 Oct 1991