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Dynamic characteristics of high speed p-substrate GaInAsP buried crescent lasers

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3 Author(s)
W. W. Ng ; Hughes Res. Lab., Malibu, CA, USA ; R. Craig ; H. W. Yen

A detailed behavior of 1.3- mu m GaInAsP p-substrate buried-crescent lasers emitting maximum output powers of more than 30 mW/facet is discussed. A 3-dB modulation bandwidth of 11.5 GHz, and relative intensity noise level of approximately -145 dB/Hz were observed at 5 I/sub th/. The two-tone intermodulation distortion was more than 30 dB below the 9-GHz subcarriers for a current modulation index of approximately 40%.<>

Published in:

Journal of Lightwave Technology  (Volume:7 ,  Issue: 3 )