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High Performance RF Integrated Circuits using the Silicon Based RE Integrated Passive Device (RFIPD)

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2 Author(s)
Choong-Mo Nam ; Dept. of Electr. Eng., Korea Polytech. Univ., Gyunggi-Do ; In-Ho Jung

In this paper, we introduce the high performance RF circuits using the RF integrated passive device (RFIPD). RFIPD is made by a low-cost manufacturing technology and a high-performance process technology of electro-chemically forming thick oxide layer on silicon wafer and processing Cu thick metal and BCB. Several RF integrated passive circuits and RF module such as LPF, BPF, balun and RF receiver module are fabricated using this new technology and they show good RF performance in spite of their small chip size

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Information, Communications and Signal Processing, 2005 Fifth International Conference on

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